CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...
Toshiba Corporation today announced the prototype of a new FeRAM -- Ferroelectric Random Access Memory -- that redefines industry benchmarks for density and operating speed. The new chip realizes ...
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